Device simulation of semiconductors sensors
Development of simulation tools at device level for semiconductor sensors. We are interested both in the simulation of static characteristics as for instance coupling capacitances, electric fields, etc, but also dynamic characteristics as signal developed in different sensors when particles are passing through.
Tools used to made this simulations are based in comercial software as TCAD or Silvaco and programs developed by ourselves. This work profits from the close collaboration with DICE (FSA/UCL).
External collaborators: Denis Flandre (UCLouvain - EPL).
Neutron irradiations with UCL cyclotron
Metrology and instrumentation of CYCLONE-110 T2 irradiation line to test semiconductor sensors and electronics under neutron fluences (max neq/cm2).
External collaborators: Michael Moll (CERN).
The CMS silicon strip tracker upgrade
Development of the "phase II" upgrade for the CMS silicon strip stracker.
More precisely, we are involved in the development of the uTCA-based DAQ system and in the test/validation of the first prototype modules. We take active part to the various test-beam campaigns (CERN, DESY, ...)
This activity will potentially make use of the cyclotron of UCL, the probe stations and the SYCOC setup (SYstem de mesure de COllection de Charge) to test the response to laser light, radioactive sources and beams.
The final goal is to take a leading role in the construction of part of the CMS Phase-II tracker.
External collaborators: CRC and CMS collaboration.