RD50

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LARA: LAser for Radiation Analysis

LARA: LAser for Radiation Analysis

LARA is a general purpose laser testbench devoted to study the radiation susceptibility of semiconductor devices.
The systems consists in a high precission step motors (~0.1 um), a 1060 nm pulsed laser (PiLAS) with associated optics to obtain beam spots f ~5-6 um, and a set of photodetectors to measure both integrated and pulse-by-pulse optical power.

LARA will have two main applications:
1. Test of semiconductor sensors (pixel, microstrips, etc).
2. Study of single event effects (SEE) in semiconductor components.

A set of standard measurement equipment will be available to perform measurements for both type of applications.

External collaborators: Denis Flandre (UCLouvain - EPL).

Neutron irradiations with UCL cyclotron

Metrology and instrumentation of CYCLONE-110 T2 irradiation line to test semiconductor sensors and electronics under neutron fluences (max Formula: 0 neq/cm2).

External collaborators: Michael Moll (CERN).


Show past projects.

Publications

2005

RD50 status report 2005 : Radiation hard semiconductor devices for very high luminosity colliders
F. Campabadal et al.
Published in CERN-LHCC-2005-37, LHCC-RD-009, Dec 2005, 2005, 113pp
Public experimental note. 14th December.


[UCLouvain] - [SST] [IRMP] - [SC] [PHYS]
Contact : Jérôme de Favereau
Job opportunities PhD position in NA62 experiment
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